Haowei Peng

Research Assistant Professor of Physics

Ph.D., Institute of Semiconductors, Chinese Academy of Sciences, 2009

SERC, Room 720B
1925 N. 12th Street 
Philadelphia, PA 19122
215-204-2399
haowei.peng@temple.edu

Research Interests

  • Defect physics in semiconductors
  • Energy application of semiconductor materials
  • Magnetic properties of semiconductor materials


Key Publications

• H. Peng, J. D. Perkins, and S. Lany, Multivalency of group 15 dopants in SnO2, Chem. Mater. 26, 4876 (2014).
• H. Peng, A. Zakutayev, S. Lany, T. R. Paudel, M. d'Avezac, P. F. Ndione, J. D. Perkins, D. S. Ginley, A. R. Nagaraja, N. H. Perry, T. O. Mason, and A. Zunger, Li‐Doped Cr2MnO4: A New p‐Type Transparent Conducting Oxide by Computational Materials Design, Adv. Funct. Mater. 23, 5267 (2013).
• H. Peng, and S. Lany, Semiconducting transition-metal oxides based on d5 cations: Theory for MnO and Fe2O3, Phys. Rev. B. 85, 201202R (2012).
• H. Peng, H. J. Xiang, S.-H. Wei, S.-S. Li, J.-B. Xia, J. Li, Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d0 Semiconductors, Phys. Rev. Lett. 102, 017201 (2009).
• H. Peng, J. Li, S.-S. Li, and J.-B. Xia, First-principles study of the electronic structures and magnetic properties of 3d transition metal-doped anatase TiO2, J. Phys.: Condens. Matter 20, 125207 (2008).